| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The Toshiba 2SK4021 is a general-purpose power MOSFET with an N-channel configuration and a built-in diode. It is designed for switching applications and operates in enhancement mode.
Key electrical specifications include a minimum breakdown voltage of 250V and a maximum continuous drain current of 4.5A. The drain-source on-resistance is a maximum of 1 ohm, and the pulsed drain current can reach up to 18A. It also has an avalanche energy rating of 51 mJ.
This MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology and is housed in a 3-pin, in-line package suitable for through-hole mounting. The package body is made of plastic/epoxy and has a rectangular shape.
The component is lead-free and RoHS3 compliant, making it suitable for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 250 V.
The maximum continuous drain current is 4.5 A.
The maximum drain-source on-resistance is 1 ohm.
It is a general-purpose power MOSFET with an N-channel configuration.
The 2SK4021 is designed for through-hole mounting.