| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,145 pcs
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2145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SK3868 from Toshiba is an N-Channel MOSFET designed for various electronic applications. It offers a maximum Drain-Source Voltage of 500V and a maximum on-resistance (RDS(on)) of 1.7Ω. The device has a maximum power dissipation rating of 35W and can operate up to a maximum temperature of 150°C.
This MOSFET features an input capacitance of 550pF. It is supplied in a TO-220-3 package and utilizes a through-hole mounting type. The 2SK3868 is suitable for applications requiring a robust power switching component with a high voltage rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the 2SK3868 is 500V.
The maximum on-resistance (RDS(on)) of the 2SK3868 is 1.7Ω.
The maximum power dissipation for the 2SK3868 is 35W.
The maximum operating temperature for the 2SK3868 is 150°C.
The 2SK3868 MOSFET is in a TO-220-3 package.
The 2SK3868 is mounted using the through-hole method.