| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
74 pcs
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74 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation |
The 2SK3850 is an N-Channel Silicon MOSFET manufactured by Fujitsu Semiconductor. This component is designed for general-purpose switching applications.
Key electrical specifications include a Drain-Source Voltage of 600V, a continuous Drain Current (Id) @ 25°C of 0.7A, and a Drain-Source Resistance of 18.5Ω. The device has a Power Dissipation rating of 15W.
The MOSFET is housed in a TO-251 package, suitable for surface mounting. Its robust design makes it a reliable choice for various electronic circuits requiring efficient power switching.
Compliance information indicates RoHS3 compliance, an MSL rating of 1 Unlimited, and REACH Unaffected status. These attributes are based on available database information and should be verified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage is 600V.
The Power Dissipation is 15W.
The 2SK3850 is available in a TO-251 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.