| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
620 pcs
|
620 pcs | On Request | 1 | On Request | On Request | 1447+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 2SK3812-ZP-E1-AZ is an N-Channel Power MOSFET from Renesas. It features a maximum drain-source voltage of 60V and a continuous drain current of 110A at case temperature. The device has a low on-resistance of 2.8mOhm at 55A and 10V gate drive.
Gate charge is 250nC at 10V, and input capacitance is 16800pF at 10V. The gate threshold voltage is 2.5V maximum at 1mA drain current. The device is designed for surface mount assembly in a TO-263-3 (D²Pak) package.
Power dissipation is 213W at case temperature and 1.5W at ambient temperature. The maximum junction temperature is 150°C. The MOSFET can be driven with 4.5V or 10V gate drive for optimal Rds(on) performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.38 | $7.38 |
| 10+ | $4.98 | $4.98 |
| 100+ | $3.62 | $3.62 |
| 800+ | $3.47 | $3.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
150°C.
It is marked as RoHS3 compliant, but this is unverified from the source database.
60 V maximum.
110 A at case temperature.
2.8 mOhm maximum at 55 A drain current and 10 V gate-source voltage.
250 nC maximum at 10 V gate-source voltage.