Mfr Part #:

2SK3798(STA4,Q,M)

Mfr Name: Toshiba

Toshiba 2SK3798(STA4,Q,M) is an N-Channel power MOSFET with 900V drain-source breakdown voltage and 4A continuous drain current. It features low on-resistance of 2.5 Ohm typical and is housed in a TO-220SIS through-hole package.

✓ Total Stock: 40 pcs

2SK3798(STA4,Q,M) Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	40 pcs On Request	40 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2SK3798(STA4,Q,M) Description

Short technical summary and product information.

The Toshiba 2SK3798(STA4,Q,M) is an N-Channel power MOSFET built with π-MOSIV technology, designed for switching regulator applications. It offers a drain-source breakdown voltage of 900V and a continuous drain current of 4A at 25°C ambient temperature, with a pulse current capability of 12A. The typical drain-source on-resistance is 2.5 Ohm (3.5 Ohm maximum) at VGS = 10V and ID = 2A, ensuring efficient power conversion.

This MOSFET features a gate threshold voltage range of 2.0V to 4.0V and a total gate charge of 26 nC typical, enabling fast switching. Switching times are characterized with a rise time of 20 ns, fall time of 45 ns, turn-on time of 65 ns, and turn-off time of 165 ns. The device also supports single pulse avalanche energy of 345 mJ and repetitive avalanche energy of 4.0 mJ, providing robustness in inductive switching environments.

The 2SK3798 is packaged in a TO-220-3 Full Pack (TO-220SIS) through-hole package, with a typical weight of 1.7 g. Maximum power dissipation is 40W at case temperature 25°C, with a channel-to-case thermal resistance of 3.125 °C/W. The operating channel temperature range is up to 150°C, and storage temperature range is -55°C to 150°C.

2SK3798(STA4,Q,M) Quick Information

Product Type: N-Channel MOSFET

Series: π-MOSIV

Canonical Name: Toshiba 2SK3798 N-Channel MOSFET

Subcategory: N-Channel MOSFET

2SK3798(STA4,Q,M) Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

2SK3798(STA4,Q,M) Features

900V drain-source breakdown voltage.
4A continuous drain current rating.
Low on-resistance of 2.5 Ohm typical.
TO-220SIS through-hole package.
High forward transfer admittance of 2.8 S.

2SK3798(STA4,Q,M) Applications

Ideal for switching regulator circuits.
Used in high-voltage power supplies.
Suitable for DC-DC converter designs.

2SK3798(STA4,Q,M) FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

900V

What is the continuous drain current?

4A at Ta=25°C

What is the typical on-resistance?

2.5 Ohm typical, 3.5 Ohm maximum at VGS=10V, ID=2A

What package is this MOSFET available in?

TO-220-3 Full Pack (TO-220SIS)

What is the operating temperature range?

Channel temperature up to 150°C, storage from -55°C to 150°C

Is this component RoHS compliant?

RoHS3 compliant (unverified)

What is the gate threshold voltage?

2.0V to 4.0V at VDS=10V, ID=1mA

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Toshiba
Current	4 A (Ta)
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	150 °C
Power Dissipation (Max)	40 W (Tc)
Rds On (Max) @ Id, Vgs	2.5 Ohm typ, 3.5 Ohm max @ 2 A, 10 V
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	2.0 V min, 4.0 V max @ 1 mA
Weight	1.7 g (typ.)