| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,890 pcs
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2890 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SK3666-3-TB-E is an N-Channel JFET from On Semiconductor with a maximum drain-source voltage of 30V and a maximum drain current of 10mA. The device features a maximum on-resistance of 200Ω and a gate-source cutoff voltage of 180mV at 1µA, allowing predictable bias behavior in low-voltage circuits. Input capacitance is specified at 4pF for signals at 10V, which supports high-frequency switching and small-signal amplification.
Power dissipation is limited to 200mW, and the maximum junction temperature is 150°C. These ratings make the component reliable for moderate-power applications while maintaining a compact footprint. The JFET is available in a surface-mount SMCP package, which is also known as TO-236-3, SC-59, or SOT-23-3. This package is designed for printed circuit board assembly and occupies minimal board area.
This N-Channel device is suited for discrete analog circuits such as voltage-controlled resistors and analog switches. Its small signal handling capability and surface-mount packaging support integration into portable and space-constrained electronics.
The maximum drain-source voltage rating is 30V.
The maximum drain current is 10mA.
The input capacitance is 4pF at a drain-source voltage of 10V.
The maximum power dissipation is 200mW.
The maximum junction temperature is 150°C.
It is available in a surface-mount package: TO-236-3, SC-59, or SOT-23-3 (SMCP).
The product record indicates RoHS3 Compliant.