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4,480 pcs
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4480 pcs | On Request | 1 | On Request | On Request | 2027+ | On Request | On Request |
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The Toshiba 2SK3569 is a silicon N-Channel MOS Type (π-MOSVI) Field Effect Transistor designed for switching regulator applications. It features a low drain-source ON resistance of 0.54Ω typical and a high forward transfer admittance of 8.5S typical.
Key electrical characteristics include a drain-source voltage rating of 600V, a continuous drain current of 10A, and a pulse drain current of 40A. The gate threshold voltage ranges from 2.0V to 4.0V. Capacitance values include an input capacitance of 1500pF, reverse transfer capacitance of 15pF, and output capacitance of 180pF, all measured at 1MHz.
This MOSFET comes in a TO-220-3 package and is designed for through-hole mounting. It has a maximum power dissipation of 45W and a maximum channel temperature of 150°C. Thermal resistance from channel to case is 2.78°C/W, and from channel to ambient is 62.5°C/W.
The 2SK3569 is an electrostatic-sensitive device and should be handled with caution. Its specifications make it suitable for various power switching applications where efficiency and reliability are crucial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the 2SK3569 is 600V.
The continuous drain current rating for the 2SK3569 is 10A.
The typical ON resistance (RDS(on)) for the 2SK3569 is 0.54Ω at a gate-source voltage of 10V and a drain current of 5A.
The 2SK3569 is available in a TO-220-3 package.
The maximum operating temperature for the 2SK3569 is 150°C.