| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The Toshiba 2SK3562 is an N-Channel MOSFET suitable for various electronic applications. It is manufactured by Toshiba and comes in a TO-220NIS package for through-hole mounting.
Key electrical specifications include a drain-source voltage rating of 600V and a typical drain-source on-resistance of 1.25 Ohms at a gate-source voltage of 10V and drain current of 3A. The threshold voltage is typically 4V. The device can dissipate up to 40W of power.
Operating temperature ranges from -55°C to 150°C, making it suitable for a wide range of environmental conditions. The component is classified as Moisture Sensitivity Level 1 (MSL 1).
This MOSFET is a component within the broader category of discrete semiconductor products, specifically transistors, FETs, and MOSFETs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage of the 2SK3562 MOSFET is 600V.
The maximum power dissipation for the 2SK3562 is 40W.
The operating temperature range for the 2SK3562 is -55°C to 150°C.
The 2SK3562 comes in a TO-220NIS package for through-hole mounting.