2SK3557-7-TB-E The 2SK3557-7-TB-E is an N-Channel JFET from ON Semiconductor designed for RF applications. It features a 15V drain-source voltage rating, 10-32mA drain current, and 35mS forward transfer admittance in a compact CP surface mount package.
Mfr Part #:

2SK3557-7-TB-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2SK3557-7-TB-E is an N-Channel JFET from ON Semiconductor designed for RF applications. It features a 15V drain-source voltage rating, 10-32mA drain current, and 35mS forward transfer admittance in a compact CP surface mount package.
✓ Total Stock: 4,020 pcs
$ Price Range: $0.15 - $0.76

2SK3557-7-TB-E Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request

2SK3557-7-TB-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Current Rating (Amps)
Frequency
Halogen Free
Industrial Grade
Input Capacitance
Lead Style
Medical Grade
Military Grade
Mounting Type
Noise Figure
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Voltage

2SK3557-7-TB-E Description

Short technical summary and product information.

The 2SK3557-7-TB-E is an N-Channel JFET manufactured by ON Semiconductor, designed for RF amplifier and low-noise applications. It is part of the 2SK3557 series and offers a drain-to-source voltage rating of 15V and a drain current range of 10 to 32 mA (IDSS). The device features a typical forward transfer admittance (|yfs|) of 35 mS and a low input capacitance of 10 pF, making it suitable for high-frequency signal processing.

 

Key electrical characteristics include a gate-source cutoff voltage (VGS(off)) of -0.3V to -1.5V, a low noise figure of 1 dB typical, and a maximum power dissipation of 200 mW. The device is housed in a CP package (SC-59, TO-236, SOT-23, TO-236AB) with surface mount mounting, and is supplied in tape and reel packaging with 3,000 pieces per reel.

 

This JFET is ideal for AM tuner RF amplification and other low-noise amplifier circuits. Its small package size and low capacitance enable compact and efficient designs. The device is Pb-free and RoHS compliant (unverified), and is rated for operation from -55°C to +150°C storage temperature.

2SK3557-7-TB-E Quick Information

Product Type: N-Channel JFET
Series: 2SK3557
Canonical Name: 2SK3557-7-TB-E N-Channel JFET
Subcategory: RF JFET

2SK3557-7-TB-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SK3557-7-TB-E Estimated Pricing

Qty Low High
1+ $0.76 $0.76
10+ $0.47 $0.47
50+ $0.35 $0.35
100+ $0.30 $0.30
500+ $0.23 $0.23
3,000+ $0.16 $0.16
6,000+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SK3557-7-TB-E Features

  • N-Channel JFET for RF amplification.
  • 15V drain-to-source voltage rating.
  • 10 to 32 mA drain current range.
  • 35 mS typical forward transfer admittance.
  • Low 10 pF input capacitance.

2SK3557-7-TB-E Applications

  • AM tuner RF amplification.
  • Low noise amplifier circuits.
  • High-frequency signal processing.

2SK3557-7-TB-E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

15 V.

What is the package type?

CP (SC-59, TO-236, SOT-23, TO-236AB) surface mount package.

What is the operating temperature range?

Storage temperature range is -55°C to +150°C, with a maximum junction temperature of 150°C.

Is the 2SK3557-7-TB-E RoHS compliant?

The datasheet indicates Pb-free, and the existing database lists RoHS3 compliant, but this is unverified.

What is the typical noise figure?

1 dB typical at VDS=5V, ID=1mA, f=1kHz, Rg=1kΩ.

What is the input capacitance?

10 pF typical at VDS=5V, VGS=0V, f=1MHz.

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