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2SK3557-6-TB-E N-Channel JFET, 15V drain-source voltage, 50mA drain current, 35mS typical forward transfer admittance. Surface mount package SOT-23 (SC-59).
Mfr Part #:

2SK3557-6-TB-E

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel JFET, 15V drain-source voltage, 50mA drain current, 35mS typical forward transfer admittance. Surface mount package SOT-23 (SC-59).
✓ Total Stock: 64,687 pcs
$ Price Range: $0.15 - $0.76

2SK3557-6-TB-E Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
61,020 pcs
On Request
61020 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
3,667 pcs
On Request
3667 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2SK3557-6-TB-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Current Rating (Amps)
Frequency
Mounting Type
Noise Figure
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Voltage
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2SK3557-6-TB-E Description

Short technical summary and product information.

The 2SK3557-6-TB-E is an N-Channel JFET from On Semiconductor designed for RF amplification and low noise amplifier applications. It features a maximum drain-to-source voltage of 15V and a maximum drain current of 50mA, with a power dissipation of 200mW.

 

Electrical characteristics include a gate-to-source cutoff voltage ranging from -0.3V to -1.5V, drain current (IDSS) of 10 to 32mA, and a forward transfer admittance of 24 to 35mS typical. The input capacitance is 10pF typical, reverse transfer capacitance is 2.9pF, and the noise figure is 1dB typical, making it suitable for low noise RF front-ends.

 

The device is housed in a surface mount package compatible with TO-236-3, SC-59, and SOT-23-3 outlines, with a supplier device package of 3-CP. It is supplied in tape and reel packaging with 3000 pieces per reel. The part is Pb-Free and RoHS compliant.

2SK3557-6-TB-E Quick Information

Product Type: N-Channel JFET
Canonical Name: 2SK3557-6-TB-E N-Channel JFET
Subcategory: N-Channel JFET

2SK3557-6-TB-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

2SK3557-6-TB-E Estimated Pricing

Qty Low High
1+ $0.76 $0.76
10+ $0.47 $0.47
50+ $0.34 $0.34
100+ $0.30 $0.30
500+ $0.23 $0.23
3,000+ $0.16 $0.16
6,000+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SK3557-6-TB-E Features

  • High forward transfer admittance up to 35 mS.
  • Low input capacitance of 10 pF typical.
  • Ultralow noise figure of 1 dB typical.
  • Surface mount package for small footprint.
  • Pb-Free and RoHS compliant.

2SK3557-6-TB-E Applications

  • AM tuner RF amplification.
  • Low noise amplifier circuits.
  • RF front-end stages.
  • Signal conditioning in portable receivers.

2SK3557-6-TB-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

15 V.

What is the drain current rating?

Maximum 50 mA.

What is the forward transfer admittance?

Minimum 24 mS, typical 35 mS at VDS = 5 V, VGS = 0 V, f = 1 kHz.

What is the noise figure?

1 dB typical at VDS = 5 V, Rg = 1 kΩ, ID = 1 mA, f = 1 kHz.

What package is this JFET available in?

TO-236-3, SC-59, SOT-23-3; supplier package 3-CP.

Is this component RoHS compliant?

RoHS3 Compliant (Pb-Free verified from datasheet).

What is the gate-to-source cutoff voltage range?

Minimum -0.3 V, typical -0.7 V, maximum -1.5 V at VDS = 5 V, ID = 100 µA.

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