| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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302 pcs
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302 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SK3531-01 is an N-Channel Silicon Power MOSFET manufactured by Fuji Electric. This component is designed for power applications, featuring a high breakdown voltage of 900V and a continuous drain current rating of 5A.
Key electrical characteristics include a typical Drain-Source On-Resistance of 1500 mΩ at VGS=10V and a minimum breakdown voltage of 900V. The gate-source voltage has a maximum rating of 30V, with a typical threshold voltage of 3.5V.
This MOSFET is housed in a TO-220 package, suitable for through-hole mounting. The component is identified by its 3 terminals and N-Channel silicon technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the 2SK3531-01 is 900V.
The continuous drain current is 5A.
The typical Drain-Source On-Resistance is 1500 mΩ at VGS=10V.
The typical gate threshold voltage is 3.5V.
The 2SK3531-01 is supplied in a TO-220 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.