| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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493 pcs
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493 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Fuji Electric 2SK3523-01R is an N-Channel Silicon Power MOSFET designed for high-speed switching applications. It offers a drain-source breakdown voltage of 500V and a continuous drain current of 25A.
Key electrical characteristics include a gate threshold voltage typically between 3.0V and 5.0V, and a low on-state resistance of 0.26 Ohms maximum at 10.5A drain current and 10V gate-source voltage. The MOSFET also features a forward transconductance of 11S minimum under similar conditions.
With a maximum power dissipation of 160W at 25°C case temperature, the 2SK3523-01R is suitable for demanding applications. It operates within a temperature range of -55°C to +150°C.
This component is packaged in a TO-3PF case, making it suitable for through-hole mounting. Its features like avalanche-proof design and low driving power make it ideal for use in switching regulators, UPS (Uninterruptible Power Supply), and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 500V.
The continuous drain current is 25A.
The maximum power dissipation is 160W.
The operating and storage temperature range is -55°C to +150°C.
The package type is TO-3PF.
The gate threshold voltage is typically between 3.0V and 5.0V.
The typical drain-source on-state resistance is 0.26 Ohms.