| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,171 pcs
|
1171 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The 2SK3480-AZ is an N-Channel power MOSFET manufactured by Renesas. It features a drain-to-source voltage rating of 100V and a continuous drain current of 50A. The device has a typical on-resistance of 31mOhm at 25A and 10V gate drive. It is designed for switching and power management applications.
This MOSFET uses metal oxide semiconductor technology and supports a gate-source voltage of up to ±20V. The gate charge is 74nC at 10V, and input capacitance is 3600pF at 10V. Power dissipation is rated at 1.5W at ambient temperature and 84W at case temperature, with a maximum junction temperature of 150°C.
The device is housed in a TO-220-3 package with TO-220AB supplier device package, featuring through-hole mounting for easy integration into power circuits. It is suitable for various applications requiring high efficiency and reliable switching performance.
| Qty | Low | High |
|---|---|---|
| 198+ | $1.51 | $1.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
50A.
TO-220-3 (TO-220AB).
150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified from the source.
31mOhm maximum at 25A and 10V gate drive.
74nC at 10V.