| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,377 pcs
|
1377 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
228 pcs
|
228 pcs | On Request | 1 | On Request | On Request | 0831+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba 2SK3397 is an N-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage rating of 30V and a low drain-source on-resistance of 6mΩ.
With a maximum power dissipation of 125W and a maximum operating temperature of 150°C, this MOSFET is suitable for demanding environments. It has 4 terminals and is manufactured by Toshiba.
This component falls under the category of Discrete Semiconductor Products, specifically within Transistors - Bipolar (BJT) - Single, Pre-Biased. Its RoHS status is listed as RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating of the 2SK3397 is 30V.
The 2SK3397 has four terminals.
The maximum power dissipation of the 2SK3397 is 125W.
The maximum operating temperature of the 2SK3397 is 150°C.
RoHS compliance status is unverified.