| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Mounting Type | |
| Number of Channels | |
| Tape & Reel | |
| Thickness |
The 2SK3377-Z-E1-AZ is an N-channel power MOSFET from Renesas designed for switching applications. It offers a maximum drain-source voltage of 60V and a continuous drain current of 20A, making it suitable for medium-power circuits.
Key electrical characteristics include a maximum on-resistance of 44mOhm at Vgs=10V and 78mOhm at Vgs=4.5V, ensuring efficient switching. The gate threshold voltage is typically 2.5V, and the device features a total gate charge of 17nC and input capacitance of 760pF, enabling fast switching performance.
The MOSFET is housed in a surface-mount MP-3Z package (equivalent to TO-252/DPAK) with a thickness of 3mm. It is rated for up to 30W power dissipation. The device is supplied in embossed tape carrier packaging.
Designed for industrial applications, this MOSFET is RoHS3 compliant and lead-free, with an MSL rating of 1. It is suitable for use in power management, DC-DC converters, and motor control circuits.
The maximum drain-source voltage (VDSS) is 60V.
The package type is MP-3Z, equivalent to TO-252 (DPAK), surface mount.
Yes, it is RoHS3 compliant and lead-free.
The continuous drain current (ID) is 20A.
The maximum on-resistance (RDS(on)) at Vgs=10V is 44mOhm.
The maximum gate threshold voltage (Vgs(th)) is 2.5V.
The power dissipation (Pd) is 30W.