| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SK319 from Hitachi is an N-Channel MOSFET Transistor housed in a TO-220-3 package. This component is suitable for applications requiring a high breakdown voltage, rated up to 500V between drain and source. It offers a maximum on-resistance of 1.5Ω and can dissipate up to 30W of power.
The transistor is designed for through-hole mounting, making it convenient for breadboarding and through-hole PCB assembly. Its input capacitance is specified at 650pF. The 2SK319 is a reliable choice for power switching and amplification circuits where its electrical characteristics meet the design requirements.
Key specifications include a 500V Drain-Source Voltage, a maximum power dissipation of 30W, and a typical input capacitance of 650pF. The RDS(on) is limited to a maximum of 1.5Ω, ensuring efficient power transfer when the MOSFET is turned on.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the 2SK319 is 500V.
The maximum RDS(on) for the 2SK319 is 1.5Ω.
The maximum power dissipation for the 2SK319 is 30W.
The 2SK319 is available in a TO-220-3 package.
The 2SK319 is designed for through-hole mounting.