| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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306,441 pcs
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306441 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SK3078A is a silicon N-channel MOS type Field Effect Transistor specifically designed for high-frequency power amplifier applications in telecommunications equipment, particularly within the VHF/UHF bands.
Key electrical characteristics include a drain-source breakdown voltage of 10V, a continuous drain current of 0.5A, and a power dissipation of 3W. The device operates at an optimal frequency of 470 MHz, delivering an output power of at least 28.0 dBmW and a power gain of 8.0 dB. Its drain efficiency is rated at a minimum of 50%.
The transistor features a gate-source voltage rating of 5V and a threshold voltage ranging from 0.20V to 1.20V. It is sensitive to electrostatic discharge, requiring careful handling with earthed tools and equipment.
Packaged in a surface-mount (SMD/SMT) configuration, the 2SK3078A is supplied on a reel. The device is suitable for applications requiring robust performance in high-frequency power amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage for the 2SK3078A is 10 V.
The continuous drain current for the 2SK3078A is 0.5 A.
The power dissipation for the 2SK3078A is 3 W.
The operating frequency for the 2SK3078A is 470 MHz.
The minimum output power for the 2SK3078A is 28.0 dBmW.
The minimum power gain for the 2SK3078A is 8.0 dB.
The minimum drain efficiency for the 2SK3078A is 50 %.