| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,065 pcs
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10065 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas 2SK3069 is an N-channel MOS Field Effect Transistor specifically engineered for high current switching applications. This device offers a breakdown voltage of 60V and can handle a continuous drain current of up to 75A.
Key electrical characteristics include a low typical on-resistance of 6 mΩ at a drain current of 37.5A and a gate-source voltage of 10V. The transistor is designed to be driven by a 4V gate drive, making it compatible with 5V sources, and has a typical gate-source threshold voltage of 4V at 1mA.
The 2SK3069 is housed in a standard TO-220AB package, suitable for through-hole mounting. Its design focuses on efficient power handling in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The continuous drain current is 75A.
The typical on-resistance is 6 mOhm.
The 2SK3069 is supplied in a TO-220AB package.
The device can be driven from a 5V source and has a 4V gate drive.