| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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245 pcs
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245 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| FET Type | |
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| Technology |
The ROHM Semiconductor 2SK3018-T106 is an N-Channel MOSFET suitable for electronic circuits requiring efficient switching and amplification. This component boasts a drain-source breakdown voltage of 30V and a continuous drain current of 100mA at 25°C.
Key electrical characteristics include a maximum on-resistance of 8 Ohms at 10mA and 4V drive voltage, and an input capacitance of 13pF at 5V. The gate threshold voltage is a maximum of 1.5V at 100µA, with a maximum gate-source voltage of ±20V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a surface-mount SC-70 or SOT-323 package, identified by the supplier device package code UMT3. The component is rated for Moisture Sensitivity Level 1 (Unlimited).
Compliance information indicates RoHS3 compliance and REACH unaffected status. The 2SK3018-T106 is an active component suitable for integration into various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V maximum.
SC-70 (SOT-323) with UMT3 supplier device package.
150°C.
100mA at 25°C ambient.
8 Ohm at 10mA drain current and 4V gate drive.
1.5V maximum at 100µA drain current.
13pF maximum at 5V drain-source voltage.