| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The 2SK3018 from ROHM Semiconductor is an N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. This MOSFET boasts a breakdown voltage of 30V and a continuous current rating of 100mA, making it suitable for low-power switching and amplification tasks.
Key electrical characteristics include a threshold voltage of 1.5V and a maximum on-state resistance (RDS(on)) of 8Ω. The input capacitance is rated at 13pF, with a rise time of 35ns. The device has a maximum power dissipation of 200mW.
Packaged in a compact SOT-23 surface mount case, the 2SK3018 is designed for easy integration into printed circuit boards using SMD/SMT termination. It operates within a wide temperature range from -55°C to 150°C, ensuring reliability in diverse environmental conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The maximum continuous drain current is 100mA (0.1A).
The gate threshold voltage is 1.5V.
The maximum on-resistance (RDS(on)) is 8Ω.
The operating temperature range is -55°C to +150°C.
The 2SK3018 is available in a surface-mount SOT-23 package.
The rise time is 35ns.