| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The 2SK2940L from Hitachi is a Silicon N-Channel MOS Field-Effect Transistor (FET) optimized for high-speed power switching applications. This device features a low typical on-resistance of 0.01 Ω, contributing to efficient power transfer and reduced heat generation.
Designed with a 4V gate drive capability, the 2SK2940L can be conveniently driven from a 5V source, simplifying circuit design. Its construction is suitable for applications requiring fast switching characteristics.
The component is housed in an LDPAK package, which is a surface-mount form factor. This packaging is commonly used in power electronics where efficient heat dissipation and a compact footprint are important.
This MOSFET is part of Hitachi's line of power switching transistors, suitable for various industrial and electronic applications where reliable and efficient switching is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical on-resistance of the 2SK2940L MOSFET is 0.01 Ω.
The 2SK2940L is a 4V gate drive device.
The 2SK2940L MOSFET is supplied in an LDPAK package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.