Mfr Part #:

2SK2906-01

The Fujitsu Semiconductor 2SK2906-01 is an N-channel MOS-FET. It features a 60V breakdown voltage and a minimum drain-source resistance of 8mΩ.

✓ Total Stock: 16,646 pcs

$ Price Range: $0.99

2SK2906-01 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	16,646 pcs On Request	16646 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2SK2906-01 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Fujitsu Semiconductor

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2SK2906-01 Description

Short technical summary and product information.

The 2SK2906-01 from Fujitsu Semiconductor is an N-channel MOS-FET designed for various electronic applications. This component boasts a minimum breakdown voltage of 60V, making it suitable for circuits requiring moderate voltage handling capabilities.

Key electrical characteristics include a minimum drain-source resistance of 8mΩ, indicating efficient current conduction. As an N-channel MOS-FET, it operates by controlling the flow of current between the drain and source terminals using a gate voltage.

While specific packaging and mounting details are not provided, this component is typically used in power switching and general-purpose amplification circuits. Its specifications suggest it is a reliable choice for engineers designing power management solutions or signal processing systems where efficient switching and low resistance are critical.

Further details regarding operating temperature, power dissipation, and specific application suitability would be available in the manufacturer's datasheet.

2SK2906-01 Quick Information

Product Type: MOS-FET

Canonical Name: 2SK2906-01 N-channel MOS-FET

Subcategory: Single, Pre-Biased

2SK2906-01 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2SK2906-01 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SK2906-01 Features

N-channel MOS-FET transistor.
60V minimum breakdown voltage.
8mΩ minimum drain-source resistance.
Suitable for power switching.

2SK2906-01 Applications

Suitable for high-speed switching applications.
Used in power supply regulation circuits.
Ideal for motor control and driver circuits.
Applicable in load switching for industrial equipment.

2SK2906-01 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the breakdown voltage of the 2SK2906-01?

The minimum breakdown voltage for the 2SK2906-01 is 60V.

What is the minimum drain-source resistance of the 2SK2906-01?

The minimum drain-source resistance is 8mΩ.

What is the RoHS status of the 2SK2906-01?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the 2SK2906-01?

The Moisture Sensitivity Level is Level 1.

What is the REACH status for the 2SK2906-01?

The REACH status is REACH Unaffected.