| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SK2866(F) is an N-Channel enhancement-mode power MOSFET designed for chopper regulator, DC-DC converter, and motor drive applications. It utilizes Toshiba's π-MOSV technology to achieve low drain-source on-resistance of 0.54 Ω typical (0.75 Ω maximum) at VGS=10V and ID=5A. The device offers a high forward transfer admittance of 9.0 S typical, ensuring efficient switching performance.
With a drain-source voltage rating of 600V and continuous drain current of 10A (40A pulsed), this MOSFET can handle demanding power conversion tasks. It features a maximum power dissipation of 125W at case temperature 25°C and a channel temperature range up to 150°C. The device also provides avalanche energy capability with single pulse avalanche energy of 363 mJ and repetitive avalanche energy of 12.5 mJ.
The 2SK2866(F) is housed in a standard TO-220-3 package (TO-220AB) with through-hole mounting, making it suitable for various PCB designs. The package weighs approximately 1.9 grams. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
600V.
TO-220-3 (TO-220AB) through-hole package.
150°C.
Yes, it is RoHS3 compliant (unverified).
0.54Ω at VGS=10V, ID=5A.
45 nC typical at VDD=400V, VGS=10V, ID=1A.
Rise time 22 ns, fall time 36 ns.