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2SK2866 The 2SK2866 is a MOSFET array manufactured by Toshiba, with a typical drain-source on-resistance of 0.54 Ohm and an operating voltage of 600 V.
Mfr Part #:

2SK2866

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The 2SK2866 is a MOSFET array manufactured by Toshiba, with a typical drain-source on-resistance of 0.54 Ohm and an operating voltage of 600 V.
✓ Total Stock: 300 pcs
$ Price Range: $0.99

2SK2866 Available from 1 distributor

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✓ Non-Authorised
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300 pcs
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2SK2866 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Operating Voltage
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2SK2866 Description

Short technical summary and product information.

The 2SK2866 is a MOSFET array produced by Toshiba, designed for high-voltage switching applications. It features a typical drain-source on-resistance of 0.54 Ohm at VGS = 10 V and a maximum drain current leakage of 100 microamps at VDS = 600 V. The device has a gate threshold voltage ranging from 2 V to 4 V, making it suitable for enhancement mode operation. It is packaged as a surface-mount component, suitable for compact circuit designs.

 

This MOSFET array is used in power switching, motor control, and high-voltage applications. Its electrical characteristics enable efficient switching with low conduction losses. The device's package type is inferred as surface mount, facilitating automated assembly processes. It complies with RoHS standards, although this status is unverified, and is rated for a maximum drain-source voltage of 600 V.

2SK2866 Quick Information

Product Type: MOSFET
Canonical Name: 2SK2866 Silicon N Channel MOS Type Field Effect Transistor
Subcategory: Field Effect Transistor

2SK2866 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SK2866 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SK2866 Features

  • Low drain-source on-resistance of 0.54 Ohm.
  • High forward transconductance of 9 Siemens.
  • Enhancement mode with 2.0 to 4.0 V threshold.
  • Maximum drain current of 100 microamps at 600 V.
  • Silicon N-channel MOSFET by Toshiba.

2SK2866 Applications

  • Suitable for high-voltage switching applications.
  • Ideal for motor drive and power regulation circuits.
  • Used in DC-DC converters and chopper regulators.
  • Applicable in electronic load switching and control.
  • Suitable for low leakage current switching environments.

2SK2866 FAQs

3 frequently asked questions generated from this part’s specifications.
What is the maximum operating voltage of the 2SK2866?

The maximum operating voltage is 600 V.

What is the typical drain-source on-resistance of the 2SK2866?

The typical drain-source on-resistance is 0.54 Ohm.

What is the gate threshold voltage range for the 2SK2866?

The gate threshold voltage ranges from 2 V to 4 V.

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