| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 2SK2857-T1-AZ is an N-channel enhancement-mode MOSFET manufactured by Renesas. It is designed for low-power switching applications requiring a drain-source voltage rating of 60V and continuous drain current of 4A. The device features a low on-resistance of 150mOhm maximum at Vgs=10V, ensuring efficient power handling.
Key electrical characteristics include a gate threshold voltage of 2V maximum, gate charge of 10.6nC, and input capacitance of 265pF. The device is capable of operating at junction temperatures up to 150°C and has a maximum power dissipation of 2W.
The MOSFET is housed in a surface mount TO-243AA package (also known as SC-62) suitable for automated assembly. It is compatible with 4V and 10V drive voltages for flexible gate drive design.
| Qty | Low | High |
|---|---|---|
| 413+ | $0.73 | $0.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V
TO-243AA (SC-62) surface mount package.
150°C junction temperature.
The component is listed as RoHS3 compliant, but this status is unverified.
2V maximum at Id=1mA.
150mOhm maximum at Id=2.5A, Vgs=10V.