2SK2854 The Toshiba 2SK2854 is an N-channel RF power MOSFET designed for applications like portable telephones. It features a 10V Drain-Source Voltage and 0.5A Drain Current.
Mfr Part #:

2SK2854

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba 2SK2854 is an N-channel RF power MOSFET designed for applications like portable telephones. It features a 10V Drain-Source Voltage and 0.5A Drain Current.
✓ Total Stock: 102,300 pcs
$ Price Range: $0.99

2SK2854 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
90,400 pcs
90400 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
11,900 pcs
11900 pcs On Request 1 On Request On Request 10+ On Request On Request

2SK2854 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Output Power
Power Dissipation

2SK2854 Description

Short technical summary and product information.

The Toshiba 2SK2854 is an N-channel radio-frequency power MOSFET. It is designed for applications such as portable telephones operating at 800MHz.

 

Key electrical characteristics include a maximum Drain-Source Voltage of 10V and a maximum Drain Current of 0.5A. The device has a maximum Power Dissipation of 0.5W. Under specific test conditions (Tc=25°C, VDD=6V, f=849MHz, Pin=0.02W), it offers a minimum Output Power of 0.2W.

 

This MOSFET is housed in a surface-mount PW-Mini package, also known by the JEITA SC-62 code. The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited. The REACH status is unaffected.

 

Documentation available includes datasheets, S-parameter data, reliability information, and various application notes covering construction, ratings, electrical characteristics, precautions, and heat sink design.

2SK2854 Quick Information

Product Type: RF Power MOSFET
Canonical Name: 2SK2854 RF Power MOSFET
Subcategory: RF Power MOSFET

2SK2854 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SK2854 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SK2854 Features

  • N-channel RF power MOSFET
  • 10V Drain-Source Voltage
  • 0.5A maximum Drain Current
  • 0.5W maximum Power Dissipation
  • Surface mount PW-Mini package

2SK2854 Applications

  • RF power amplifier for 800MHz portable telephones
  • N-channel MOSFET for RF power amplification
  • Surface mount RF power MOSFET design
  • RF power MOSFET for 849MHz applications

2SK2854 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the 2SK2854?

The maximum Drain-Source Voltage is 10V.

What is the maximum Drain Current of the 2SK2854?

The maximum Drain Current is 0.5A.

What is the power dissipation rating for the 2SK2854?

The power dissipation is rated at a maximum of 0.5W.

What is the minimum output power of the 2SK2854?

The minimum output power is 0.2W under specified conditions.

What package type is the 2SK2854 available in?

The 2SK2854 is available in the PW-Mini package, also known as JEITA SC-62.

How is the 2SK2854 mounted?

The 2SK2854 is designed for surface mounting.

What is the RoHS status of the 2SK2854?

The RoHS status is RoHS3 Compliant.

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