| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
11,900 pcs
|
11900 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Output Power | |
| Power Dissipation |
The Toshiba 2SK2854 is an N-channel radio-frequency power MOSFET. It is designed for applications such as portable telephones operating at 800MHz.
Key electrical characteristics include a maximum Drain-Source Voltage of 10V and a maximum Drain Current of 0.5A. The device has a maximum Power Dissipation of 0.5W. Under specific test conditions (Tc=25°C, VDD=6V, f=849MHz, Pin=0.02W), it offers a minimum Output Power of 0.2W.
This MOSFET is housed in a surface-mount PW-Mini package, also known by the JEITA SC-62 code. The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited. The REACH status is unaffected.
Documentation available includes datasheets, S-parameter data, reliability information, and various application notes covering construction, ratings, electrical characteristics, precautions, and heat sink design.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage is 10V.
The maximum Drain Current is 0.5A.
The power dissipation is rated at a maximum of 0.5W.
The minimum output power is 0.2W under specified conditions.
The 2SK2854 is available in the PW-Mini package, also known as JEITA SC-62.
The 2SK2854 is designed for surface mounting.
The RoHS status is RoHS3 Compliant.