| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
524 pcs
|
524 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature | |
| Power Dissipation |
The 2SK2850 is an N-channel MOSFET manufactured by Fujitsu Semiconductor. This component is designed for general electronic applications and offers a breakdown voltage of 900V.
Key electrical specifications include a minimum drain-source resistance of 2.5Ω and a maximum power dissipation of 125W. The maximum operating temperature is rated at 150°C.
This MOSFET has 3 terminals. The product is described as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status. However, these compliance details are unverified.
Note that the information provided is a guide, and the products are not designed for specialized quality, reliability, or hazardous environments such as aerospace or medical fields.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the 2SK2850 is 900V.
The 2SK2850 has three terminals.
The maximum power dissipation is 125W.
The drain-source resistance is 2.5Ω.
The maximum operating temperature is 150°C.