| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
472 pcs
|
472 pcs | On Request | 1 | On Request | On Request | 1025+ | On Request | On Request | |
|
55 pcs
|
55 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba 2SK2837 is a silicon N-Channel MOS Field Effect Transistor utilizing advanced processing techniques for low on-resistance per silicon area. This MOSFET is designed for applications such as chopper regulators, DC-DC converters, and motor drives.
Key electrical characteristics include a drain-source voltage (VDS) of 500V and an operating junction temperature of up to 150°C. These features contribute to its efficiency, robustness, and reliability, making it suitable for demanding applications like PDP driving.
The 2SK2837 leverages the latest processing techniques to achieve a low drain-source ON resistance. Its high repetitive peak current capability further enhances its performance in power switching scenarios. This device is engineered for a wide variety of applications requiring high-performance power MOSFETs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the 2SK2837 is 500V.
The 2SK2837 MOSFET has a maximum operating junction temperature of 150°C.
The 2SK2837 is designed for chopper regulators, DC-DC converters, and motor drive applications.