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174 pcs
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174 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Fujitsu Semiconductor 2SK2808 is an N-Channel Power MOSFET suitable for general-purpose switching applications. This component offers a maximum continuous drain current of 35A and a pulsed drain current of up to 140A.
With a drain-source voltage rating of 30V and a low on-resistance of 0.03 Ohms, the 2SK2808 is designed for efficient power management. The MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology and operates in enhancement mode.
Packaged in a TO-220F configuration with flange mount and through-hole termination, this isolated device is constructed from silicon with a plastic/epoxy body. Its general-purpose nature makes it a versatile component for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current (ID) for the 2SK2808 is 35 A.
The drain-source voltage (Vds) rating for the 2SK2808 is 30 V.
The typical drain-source on-resistance (Rds(on)) for the 2SK2808 is 0.03 Ohms.
The 2SK2808 is an N-Channel, enhancement mode, Metal-Oxide Semiconductor Power MOSFET.
The 2SK2808 is supplied in a TO-220F package with flange mount and through-hole termination.