| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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150,667 pcs
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150667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SK2741 is a silicon N-channel MOS Field Effect Transistor designed for various power switching applications. It is suitable for use in chopper regulators, DC-DC converters, and motor drive circuits.
Key electrical characteristics include a drain-source voltage (Vds) of 60V, a continuous drain current (Id) of 5A, and a pulse drain current (Idp) of 20A. The device exhibits a low drain-source ON resistance (Rds(on)) of 0.12 Ω (typ.) at Vgs = 10V, Id = 2.5A, and a high forward transfer admittance (|Yfs|) of 5.0 S (typ.). The gate threshold voltage (Vth) ranges from 0.8V to 2.0V.
With a channel temperature rating of 150°C and a storage temperature range of -55°C to 150°C, the 2SK2741 is built for robust operation. Its thermal resistance from channel to ambient is 50 °C/W. The transistor is an electrostatic sensitive device and requires careful handling.
Applications include power supply circuits, voltage converters, and motor control systems where efficient switching and low power loss are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the 2SK2741 is 60 V.
The typical drain-source ON resistance (Rds(on)) is 0.12 Ω at VGS = 10V, ID = 2.5A.
The typical forward transfer admittance (|Yfs|) is 5.0 S.
The gate threshold voltage (Vth) ranges from 0.8 V to 2.0 V.
The maximum channel temperature (Tch) is 150 °C.
The typical weight of the 2SK2741 is 0.12 g.