| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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256 pcs
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256 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The Toshiba 2SK2698 is a silicon N-Channel MOS Field Effect Transistor designed for various power switching applications. It features a high drain-source voltage rating of 500V and a continuous drain current capability of 15A.
Key electrical characteristics include a low typical drain-source ON resistance of 0.35 Ohms at 7.0A drain current and 10V gate-source voltage. The forward transfer admittance is typically 11 S. The device also exhibits a gate threshold voltage ranging from 2.0V to 4.0V.
With a maximum power dissipation of 150W at 25°C case temperature, the 2SK2698 is suitable for demanding applications. Its switching characteristics include a typical rise time of 50ns and a fall time of 65ns, making it efficient for high-frequency operations.
The transistor is packaged in a TO-220-3 (TO-220AB) style package, with a weight of approximately 4.6g. It is an electrostatic sensitive device and requires careful handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500 V.
The typical ON resistance is 0.35 Ohms.
The gate threshold voltage ranges from 2.0 V to 4.0 V.
The typical rise time is 50 ns, turn-on time is 85 ns, fall time is 65 ns, and turn-off time is 260 ns.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.