| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Mounting Type | |
| Tape & Reel | |
| Thermal Resistance |
The 2SK2690-01 from Fujitsu Semiconductor is an N-channel MOS-FET belonging to the FAP-IIIB Series. It offers a high continuous drain current of 80A and a low drain-source on-resistance, with values as low as 0.0075Ω at VGS=10V. The device boasts a breakdown voltage of 60V and a maximum power dissipation of 125W.
Key electrical characteristics include a gate threshold voltage between 1.0V and 2.0V, and fast switching times with turn-on times as low as 15ns and turn-off times as low as 190ns. It also features avalanche rating and low driving power.
This MOSFET is suitable for various power applications, including motor control, general-purpose power amplifiers, and DC-DC converters. It is available in a through-hole package, facilitating easy integration into circuit designs.
With a maximum operating temperature of 150°C and a storage temperature range of -55°C to +150°C, the 2SK2690-01 is built for demanding environments. Its thermal resistance is 35°C/W from channel to air and 1.0°C/W from channel to case.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the 2SK2690-01 is 60V.
The continuous drain current for the 2SK2690-01 is 80A.
The maximum power dissipation for the 2SK2690-01 is 125W.
The typical gate threshold voltage for the 2SK2690-01 is 1.5V.
The typical drain-source on-resistance at 40A and 4V gate-source voltage is 0.017Ω.
The typical drain-source on-resistance at 40A and 10V gate-source voltage is 0.01Ω.
The operating temperature range for the 2SK2690-01 is -55°C to 150°C.