2SK2690 The Toshiba 2SK2690 is an N-channel MOS-FET designed for various electronic applications. It features a 60V breakdown voltage and 17mΩ drain-source resistance.
Mfr Part #:

2SK2690

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba 2SK2690 is an N-channel MOS-FET designed for various electronic applications. It features a 60V breakdown voltage and 17mΩ drain-source resistance.
✓ Total Stock: 300 pcs
$ Price Range: $0.99

2SK2690 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
300 pcs
300 pcs On Request 1 On Request On Request On Request On Request On Request

2SK2690 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Forward Voltage
Mounting Type

2SK2690 Description

Short technical summary and product information.

The 2SK2690 from Toshiba is an N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOS-FET). This component is suitable for applications requiring efficient switching and amplification.

 

Key electrical specifications include a breakdown voltage of 60V and a low drain-source on-resistance of 17mΩ. It can handle a maximum power dissipation of 125W, making it robust for demanding tasks. The operating temperature range is from -55°C to 150°C.

 

This device is designed for through-hole mounting, facilitating integration into circuit boards. Its specifications suggest suitability for power supply circuits, motor control, and general-purpose switching applications where reliable performance is essential.

2SK2690 Quick Information

Product Type: MOS-FET
Canonical Name: 2SK2690 N-channel MOS-FET
Subcategory: N-Channel

2SK2690 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SK2690 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SK2690 Features

  • N-channel MOS-FET by Toshiba.
  • 60V breakdown voltage.
  • Low 17mΩ drain-source resistance.
  • 125W maximum power dissipation.
  • Through-hole mounting type.

2SK2690 Applications

  • Suitable for power switching.
  • Used in amplification circuits.
  • Ideal for power supplies.
  • Applicable to motor control.

2SK2690 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the 2SK2690?

The breakdown voltage of the 2SK2690 is 60V.

What is the drain-source on-resistance for the 2SK2690?

The drain-source on-resistance is 17mΩ.

What is the maximum power dissipation of the 2SK2690?

The maximum power dissipation is 125W.

What is the operating temperature range for the 2SK2690?

The operating temperature range is -55°C to 150°C.

How is the 2SK2690 mounted?

The 2SK2690 is a through-hole mount component.

2SK2690 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
TLP781F(D4DLTGRH
TLP781F(D4DLTGRH
Toshiba
The Toshiba TLP781F(D4DLTGRH is a transistor output optoisolator featuring 5000Vrms isolation and a 4-DIP package. It operates with a typical forward voltage of 1.15V.
View Part
TLP3051
TLP3051
Toshiba
The Toshiba TLP3051 is a photo-triac optoisolator designed for driving triacs and SCRs. It features a 600V peak off-state voltage and 5000Vrms isolation.
View Part
TLP621-2GB
TLP621-2GB
Toshiba
The Toshiba TLP621-2GB is an optocoupler featuring an infrared LED and an NPN silicon phototransistor. It offers 5300VRMS AC isolation voltage and a wide operating temperature range.
View Part
MOC8106
MOC8106
On Semiconductor
The Fairchild Semiconductor MOC8106 is a transistor output optoisolator offering 5300Vrms isolation. It operates within a temperature range of -55°C to 100°C.
View Part
Home

Categories