| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SK2690 from Toshiba is an N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOS-FET). This component is suitable for applications requiring efficient switching and amplification.
Key electrical specifications include a breakdown voltage of 60V and a low drain-source on-resistance of 17mΩ. It can handle a maximum power dissipation of 125W, making it robust for demanding tasks. The operating temperature range is from -55°C to 150°C.
This device is designed for through-hole mounting, facilitating integration into circuit boards. Its specifications suggest suitability for power supply circuits, motor control, and general-purpose switching applications where reliable performance is essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the 2SK2690 is 60V.
The drain-source on-resistance is 17mΩ.
The maximum power dissipation is 125W.
The operating temperature range is -55°C to 150°C.
The 2SK2690 is a through-hole mount component.