| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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200,889 pcs
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200889 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SK2615TE12L,F is an N-Channel MOSFET designed for various electronic applications. This component features a drain-source breakdown voltage of 60V and a continuous drain current of 2A.
Key electrical characteristics include a typical drain-source on-resistance of 300mΩ at 10V gate-source voltage, and a typical gate-source threshold voltage of 2V at 1mA drain current. The device has a typical power dissipation of 1.5W.
Packaged in a SOT-89 surface-mount case, the 2SK2615TE12L,F is suitable for applications requiring compact and efficient power switching or amplification. Its specifications make it a versatile component for general-purpose use in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 60V.
The continuous drain current rating is 2A.
The typical drain-source on-resistance is 300mOhm at a gate-source voltage of 10V.
The typical gate-source threshold voltage is 2V at a drain current of 1mA.
The power dissipation is rated at 1.5W.
The device is available in a SOT-89 package.