2SK2615TE12L,F The Toshiba 2SK2615TE12L,F is an N-Channel MOSFET in a SOT-89 package. It features a 60V drain-source breakdown voltage and 2A continuous drain current.
Mfr Part #:

2SK2615TE12L,F

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba 2SK2615TE12L,F is an N-Channel MOSFET in a SOT-89 package. It features a 60V drain-source breakdown voltage and 2A continuous drain current.
✓ Total Stock: 200,889 pcs
$ Price Range: $0.99

2SK2615TE12L,F Available from 1 distributor

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2SK2615TE12L,F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Power Dissipation
SVHC Present

2SK2615TE12L,F Description

Short technical summary and product information.

The Toshiba 2SK2615TE12L,F is an N-Channel MOSFET designed for various electronic applications. This component features a drain-source breakdown voltage of 60V and a continuous drain current of 2A.

 

Key electrical characteristics include a typical drain-source on-resistance of 300mΩ at 10V gate-source voltage, and a typical gate-source threshold voltage of 2V at 1mA drain current. The device has a typical power dissipation of 1.5W.

 

Packaged in a SOT-89 surface-mount case, the 2SK2615TE12L,F is suitable for applications requiring compact and efficient power switching or amplification. Its specifications make it a versatile component for general-purpose use in electronic circuits.

2SK2615TE12L,F Quick Information

Product Type: N-Channel MOSFET
Canonical Name: 2SK2615TE12L,F N-Channel MOSFET
Subcategory: N-Channel

2SK2615TE12L,F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SK2615TE12L,F Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SK2615TE12L,F Features

  • 60V drain-source breakdown voltage.
  • 2A continuous drain current rating.
  • 300mΩ typical on-resistance at 10V.
  • 1.5W power dissipation capability.
  • SOT-89 surface-mount package.

2SK2615TE12L,F Applications

  • Suitable for low-power DC-DC converters.
  • Used in load switching applications.
  • Ideal for power management in portable devices.
  • Applied in motor drive control circuits.
  • Used in battery protection circuits.

2SK2615TE12L,F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the 2SK2615TE12L,F?

The minimum drain-source breakdown voltage is 60V.

What is the continuous drain current rating?

The continuous drain current rating is 2A.

What is the typical on-resistance of this MOSFET?

The typical drain-source on-resistance is 300mOhm at a gate-source voltage of 10V.

What is the gate-source threshold voltage?

The typical gate-source threshold voltage is 2V at a drain current of 1mA.

What is the power dissipation rating?

The power dissipation is rated at 1.5W.

What package is the 2SK2615TE12L,F available in?

The device is available in a SOT-89 package.

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