| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,447 pcs
|
2447 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Tape & Reel |
The Toshiba 2SK2608 is an N-Channel MOSFET with key electrical and thermal specifications suitable for power applications. It features a maximum Drain-Source Voltage of 900V and a typical Drain-Source Resistance of 4.3Ω.
With a maximum power dissipation rating of 100W and a maximum operating temperature of 150°C, this MOSFET is designed to handle demanding conditions. It is housed in a TO-220AB package and utilizes through-hole mounting.
This component is manufactured by Toshiba and falls under the N-Channel MOSFET category. Its specifications make it a candidate for use in power switching and amplification circuits where high voltage and moderate power handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the 2SK2608 is 900V.
The 2SK2608 MOSFET has a maximum power dissipation of 100W.
The maximum operating temperature for the 2SK2608 is 150°C.
The 2SK2608 is available in a TO-220AB package.
Yes, the 2SK2608 supports through-hole mounting.