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450 pcs
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450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Toshiba 2SK2607 is a Silicon N-Channel MOSFET manufactured by Toshiba. This component is designed for power switching applications and offers a maximum Drain-Source Voltage of 800V and a continuous Current Rating of 9A.
Key electrical characteristics include a maximum On-Resistance of 1.2Ω and an Input Capacitance of 2.16nF. The device also has a fast Rise Time of 25ns and a maximum Power Dissipation of 150W. The maximum operating temperature is rated at 150°C.
This MOSFET is housed in a TO-3PN package and features a Through Hole Mount type, making it suitable for various power supply designs, motor control circuits, and general-purpose power switching applications where robust performance and high voltage handling are required.
With 3 terminals, the 2SK2607 provides a reliable solution for engineers seeking a high-performance N-Channel MOSFET for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 800V.
The continuous current rating is 9A.
The maximum on-resistance is 1.2Ω.
The maximum power dissipation is 150W.
The maximum operating temperature is 150°C.
The 2SK2607 is in a TO-3PN package.
The 2SK2607 is mounted using the Through Hole method.