| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,533 pcs
|
120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The 2SK2315TYTR-E is a surface-mount N-Channel MOSFET from Renesas. It is designed for switching applications requiring up to 60V drain-source voltage and 2A continuous drain current. The device offers a maximum on-resistance of 450 mOhm at a gate drive of 4V. The input capacitance is 173 pF. The maximum power dissipation is 1W at ambient temperature, with an operating junction temperature up to 150°C. The MOSFET is packaged in the UPAK (TO-243AA) surface-mount package, which is suitable for compact PCB designs. The gate-source voltage range is ±20V, allowing flexible drive voltage levels.
60V.
Surface-mount TO-243AA (UPAK).
150°C.
RoHS3 Compliant.
2A at ambient temperature.
450 mOhm at Vgs=4V and Id=1A.
±20V.