SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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52,688 pcs
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52688 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Hitachi 2SK215 is a Silicon N-Channel MOS Field-Effect Transistor (FET) manufactured by Hitachi Semiconductor. This component is designed for power switching applications.
Key electrical specifications include a Drain-Source Voltage of 50V and a Drain-Source Resistance of 20Ω. The device has a maximum power dissipation of 200mW and can operate at temperatures up to 150°C.
This MOSFET is suitable for various electronic designs requiring efficient switching and power handling. Its specifications make it a reliable choice for general-purpose power applications.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the 2SK215 is 50V.
The Drain-Source Resistance of the 2SK215 is 20Ω.
The maximum power dissipation for the 2SK215 is 200mW.
The maximum operating temperature for the 2SK215 is 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.