| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The 2SK2147 is an N-Channel Silicon Power MOSFET produced by Fuji Electric. It is designed for high-efficiency power switching in electronic circuits. The device complies with RoHS3 standards and has a Moisture Sensitivity Level of 1, indicating unlimited storage and handling conditions. Its specifications include maximum drain-source voltage, gate threshold voltage, and continuous drain current, which are critical for circuit design. The package type is not specified in the available data.
This MOSFET is used in various power electronic applications, including motor control, power supplies, and inverter circuits. Its construction and electrical characteristics make it suitable for high-speed switching and low conduction losses. The device's package and mounting details are not provided, but it is typically available in surface-mount or through-hole configurations.
Designers should consider the gate charge and threshold voltage for proper gate drive circuitry. The device's compliance with environmental standards ensures its suitability for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SK2147 is RoHS3 compliant.
The maximum drain-source voltage is specified in the electrical specifications.
The gate threshold voltage is specified as typical in the electrical specifications.
The maximum continuous drain current is specified in the electrical specifications.