| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,040 pcs
|
2040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The 2SK2145-Y from Toshiba Semiconductor and Storage is a dual N-channel Junction Field-Effect Transistor (JFET). This component is designed for surface mount applications and comes in a compact SC-74A, SOT-753 package.
Key electrical characteristics include a typical drain current (Idss) of 1.2 mA at 10V, a cutoff voltage (VGS off) of 200 mV at 100 nA, and a maximum input capacitance (Ciss) of 13 pF at 10V. The device has a maximum power dissipation rating of 300 mW and can operate in temperatures up to 125°C (TJ).
This JFET is suitable for various electronic circuits requiring amplification or switching functions. Its surface mount package facilitates automated assembly processes, making it a practical choice for high-density designs. The dual-channel configuration allows for versatile circuit implementations.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH Unaffected status. The component is supplied in Tape & Reel or Cut Tape packaging options.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum power dissipation is 300 mW.
The maximum operating junction temperature is 125°C.
The 2SK2145-Y is available in a surface mount SMV package, which corresponds to SC-74A or SOT-753.
The typical drain current (Idss) is 1.2 mA at Vds=10V.
The maximum input capacitance (Ciss) is 13 pF at Vds=10V.