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2SK211GR The Toshiba 2SK211GR is an N-Channel JFET in an SC-59 package. It features a maximum power dissipation of 150mW and a VGS(off) of 4V.
Mfr Part #:

2SK211GR

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba 2SK211GR is an N-Channel JFET in an SC-59 package. It features a maximum power dissipation of 150mW and a VGS(off) of 4V.
✓ Total Stock: 90,400 pcs
$ Price Range: $0.99

2SK211GR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
90,400 pcs
On Request
90400 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2SK211GR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
Power Dissipation
SVHC Present
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2SK211GR Description

Short technical summary and product information.

The Toshiba 2SK211GR is an N-Channel Junction Field-Effect Transistor (JFET) designed for various electronic applications. It is housed in a compact SC-59 surface-mount package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a maximum power dissipation of 150mW and a gate-source cutoff voltage (VGS(off)) ranging from 0.4V to 4.0V. The device also exhibits a maximum input capacitance (Ciss) of 6.0pF and a maximum drain-source on-resistance (RDS(on)) of 10mΩ under specific test conditions.

 

This JFET is specified with RoHS3 compliance, indicating adherence to environmental standards. Its small form factor and electrical properties make it a versatile component for signal amplification and switching circuits where low power consumption and specific JFET characteristics are required.

2SK211GR Quick Information

Product Type: N-Channel JFET
Canonical Name: Toshiba 2SK211GR N-Channel JFET
Subcategory: N-Channel

2SK211GR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SK211GR Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SK211GR Features

  • N-Channel JFET in SC-59 package.
  • Maximum power dissipation of 150mW.
  • Gate-source cutoff voltage up to 4.0V.
  • Input capacitance of 6.0pF maximum.
  • RoHS3 compliant component.

2SK211GR Applications

  • Suitable for low-noise amplifier stages.
  • Used in analog switching circuits.
  • Ideal for RF signal processing.
  • Applicable in voltage-controlled resistor designs.

2SK211GR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source on-resistance of the 2SK211GR?

The maximum drain-source on-resistance is 10mΩ, measured at V(DS)=10V, I(D)=1.0uA.

What is the minimum drain-source on-resistance of the 2SK211GR?

The minimum drain-source on-resistance is 5mΩ, measured at V(DS)=10V, I(D)=1.0uA.

What is the maximum gate leakage current for the 2SK211GR?

The maximum gate leakage current is 10nA.

What is the gate-source cutoff voltage range for the 2SK211GR?

The gate-source cutoff voltage ranges from 0.4V to 4V.

What is the maximum input capacitance of the 2SK211GR?

The maximum input capacitance is 6pF.

What is the maximum power dissipation of the 2SK211GR?

The maximum power dissipation is 150mW.

What is the package type for the 2SK211GR?

The package type is SC-59.

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