BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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86,095 pcs
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86095 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Toshiba 2SK211-Y is a silicon N-Channel Junction Type FET designed for applications such as FM tuners and VHF band amplifiers. It boasts a low noise figure of 2.5dB (typ.) at 100 MHz and a high forward transfer admittance of 9 mS (typ.). Its extremely low reverse transfer capacitance of 0.1 pF (typ.) is also a key characteristic.
This JFET operates with a maximum gate-drain voltage of -18V and a maximum gate current of 10mA. The drain power dissipation is limited to 150mW at 25°C ambient temperature, with a maximum junction temperature of 125°C. The device is housed in a compact SC-59 package, weighing approximately 0.012g.
Key electrical characteristics include a gate leakage current of -10nA (max), a gate-source cut-off voltage ranging from -0.4V to -4.0V, and an input capacitance of 6.0pF (typ.). The power gain is typically 18dB at 100 MHz.
The 2SK211-Y is suitable for various RF applications requiring low noise and high performance in a small form factor.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical noise figure for the 2SK211-Y is 2.5dB at 100 MHz.
The typical forward transfer admittance of the 2SK211-Y is 9 mS at 1 kHz.
The typical reverse transfer capacitance of the 2SK211-Y is 0.1 pF at 1 MHz.
The 2SK211-Y is designed for FM tuner applications and VHF band amplifier applications.
The 2SK211-Y is supplied in an SC-59 package.