2SK211-GR

The 2SK211-GR from Toshiba is a Field Effect Transistor (FET) specifically designed for use in FM tuner and VHF band amplifier circuits. This component offers a low noise figure of 2.5dB (typical) at 100 MHz, making it suitable for sensitive RF applications.

Key electrical characteristics include a high forward transfer admittance of 9 mS (typical) and an extremely low reverse transfer capacitance of 0.1 pF (typical). The device operates within specified absolute maximum ratings, including a gate-drain voltage of -18V, a gate current of 10mA, and a drain power dissipation of 150mW. The junction temperature is rated up to 125°C, with a storage temperature range of -55°C to 125°C.

Electrical characteristics further detail its performance with a gate leakage current of -10nA, a gate-drain breakdown voltage of -18V, and a drain current range from 1.0 to 10mA. The gate-source cut-off voltage is between -0.4V and -4.0V. It also provides a power gain of 18dB and a noise figure ranging from 2.5 to 3.5dB.

This JFET is intended for applications requiring high performance in the VHF frequency range, such as radio tuners and amplifiers where low noise and good signal amplification are critical.