| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation | |
| SVHC Present |
This Toshiba 2SK209-BL is an N-JFET transistor with unipolar polarization. It offers a typical drain current of 14mA and a power dissipation of 0.15W. The transistor is housed in an SC59 package and is suitable for Surface Mount Device (SMD) applications.
Key electrical characteristics include a gate-source voltage of -50V and a typical gate current of 10mA. The component is designed for reliable performance in various electronic circuits requiring JFET functionality.
Designed for ease of integration into modern electronic assemblies, the 2SK209-BL utilizes SMD mounting. It is supplied on tape and reel, with a standard reel quantity of 3000 pieces, facilitating automated manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is an N-JFET (N-channel Junction Field-Effect Transistor) with unipolar polarization.
The typical drain current is 14mA.
The power dissipation is 0.15W.
The maximum gate-source breakdown voltage is -50V.
The typical gate current is 10mA.
The case is SC59.
The mounting type is SMD (Surface Mount Device).