| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SK208-YTE85L,F from Toshiba Semiconductor and Storage is an N-Channel Junction Field-Effect Transistor (JFET). It is designed for surface mount applications and comes in a compact S-Mini package (TO-236-3, SC-59, SOT-23-3).
Key electrical specifications include a breakdown voltage of 50V (V(BR)GSS) and a maximum continuous drain current (Id) of 6.5mA. The typical drain current at Vds=0 and Vgs=0 (Idss) is 1.2mA at 10V. The cutoff voltage (VGS off) at 100nA is typically 400mV. Input capacitance (Ciss) is a maximum of 8.2pF at 10V, and the maximum power dissipation is 100mW.
This JFET operates within a temperature range of -55°C to 125°C (TJ). Its RoHS status is listed as RoHS Compliant, and it has a Moisture Sensitivity Level (MSL) of 1.
This component is suitable for various electronic circuits requiring a small-signal N-channel JFET with moderate voltage and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (V(BR)GSS) is 50V.
The maximum continuous drain current (Id) is 6.5mA.
The maximum power dissipation is 100mW.
The operating temperature range is up to 125°C.
It is in a surface mount S-Mini package, also known as TO-236-3, SC-59, or SOT-23-3.