| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,560 pcs
|
2560 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Style |
The 2SK2007-E from Toshiba is a high-performance N-Channel MOSFET designed for switching regulator applications. It offers a robust 250V Drain to Source Voltage (Vds) and a continuous drain current (Ids) of 20A, making it suitable for demanding power applications.
This MOSFET is housed in a TO-3P package and utilizes a Through Hole mounting style, facilitating integration into various circuit designs. Its N-channel polarity is a standard configuration for many power switching circuits.
The 2SK2007-E is part of a family of MOSFETs that includes alternatives and similar parts from manufacturers like Renesas Electronics, Toshiba, and Mitsubishi, offering flexibility in component selection and potential for circuit optimization.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain to Source Voltage is 250V.
The Continuous Drain Current is 20A.
The 2SK2007-E is supplied in a TO-3P package.
The 2SK2007-E has a Through Hole mounting style.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.