| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The 2SK193 is an N-Channel Field-Effect Transistor (FET) manufactured by NEC. This component is suitable for applications requiring a high breakdown voltage, rated at 900V between the drain and source.
Key electrical characteristics include a maximum power dissipation of 150W and a drain-source resistance of 1.2Ω. The maximum operating temperature is specified at 150°C, ensuring reliable performance under demanding conditions.
This FET is part of the broader category of discrete semiconductor products, specifically within transistors. Its specifications make it a candidate for power switching or amplification circuits where high voltage handling is necessary. The component has 3 terminals and is noted as RoHS3 Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the 2SK193 is 900V.
The 2SK193 has a maximum power dissipation of 150W.
The maximum operating temperature for the 2SK193 is 150°C.
The 2SK193 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SK193 is 1 Unlimited.