| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The 2SK1723 from Toshiba is an N-Channel MOSFET Transistor suitable for applications such as power supplies, converters, and power motor controls. It offers a high Drain-Source Voltage (V DSS) of 600V (Min) and a continuous Drain Current (I D) of 12A at 25℃.
Key electrical characteristics include a Gate Threshold Voltage (V GS(th)) ranging from 1.5V to 3.5V and a Drain-Source On-Resistance (R DS(on)) of 0.65Ω at V GS=10V and I D=6A. The transistor also exhibits a Zero Gate Voltage Drain Current (I DSS) of 300µA at 600V and a Gate-Body Leakage Current (I GSS) of ±100nA at ±25V.
With a Total Power Dissipation (P tot) of 150W at 25℃ and a maximum operating junction temperature of 150℃, the 2SK1723 is built for demanding power applications. The storage temperature range is -55℃ to 150℃.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V
12A
150C
1.5V to 3.5V
0.65 ohms
-55C to 150C
±30V