| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
80 pcs
|
80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Input Capacitance | |
| Junction Temperature | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Tape & Reel |
The 2SK170 is an N-Channel JFET (Junction Field-Effect Transistor) manufactured by TOS, designed for use in the first stages of EQ and M.C. head amplifiers.
Key electrical characteristics include a high forward transfer admittance of 22 mS (typ.) at 10V drain-source voltage and 0V gate-source voltage. It also features a high breakdown voltage of -40V (VGDS) and low noise with an En of 0.95 nV/Hz±/2 (typ.) at 10V drain-source voltage and 1mA drain current.
The device has a high input impedance, with a gate reverse current (IGSS) of -1 nA (max) at -30V gate-source voltage. Absolute maximum ratings include a gate-drain voltage of -40V, gate current of 10mA, and drain power dissipation of 400mW. The junction temperature is rated up to 125°C, with a storage temperature range of -55°C to 125°C.
This JFET is recommended for applications requiring high input impedance and low noise performance, particularly in audio pre-amplifier circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical forward transfer admittance (|Yfs|) of the 2SK170 is 22 mS.
The gate-drain breakdown voltage (V(BR)GDS) for the 2SK170 is -40 V.
The maximum drain power dissipation (PD) for the 2SK170 is 400 mW.
The typical noise figure (NF) for the 2SK170 is 1.0 dB.
The RoHS status of the 2SK170 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SK170 is 1 Unlimited.