| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
56 pcs
|
56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Input Capacitance | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation | |
| Storage Temperature | |
| Tape & Reel |
The Toshiba 2SK1653 is an N-Channel Enhancement MOSFET, suitable for various power switching applications. It features a drain-source breakdown voltage of 60V and a continuous drain current of 45A. The device has a maximum power dissipation of 45W and a low gate threshold voltage, with a minimum of 0.8V and a maximum of 2.0V.
Packaged in a SOT-186 case, this MOSFET is designed for surface mount applications. Key electrical characteristics include a maximum on-resistance of 35 Ohms and a pulsed drain current of 180A at 25°C. The input capacitance is 3.8nF, and gate leakage current is a maximum of 10µA.
With a thermal resistance of 62.5°C/W, the 2SK1653 is engineered for reliable performance in demanding environments. Its specifications make it a suitable component for power supply circuits, motor control, and other power management systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The continuous drain current is 45A.
The package type is SOT-186.
The maximum power dissipation is 45W.
The maximum on-resistance is 35 Ohms.
The thermal resistance is 62.5°C/W.